LPT-7 Diode-Pumped Solid-State Laser Demonstrator
Zvinotsanangurwa
Semiconductor Laser | |
CW Output Power | ≤ 500 mW |
Polarization | TE |
Center Wavelength | 808 ± 10 nm |
Operation Temperature Range | 10 ~ 40 °C |
Kutyaira Current | 0 ~ 500 mA |
Nd: YVO4Crystal | |
Nd Doping Concentration | 0.1 ~ 3 atm% |
Dimension | 3 × 3 × 1 mm |
Flatness | < λ/10 @632.8 nm |
Coating | AR@1064 nm, R<0.1%;808="" t="">90% |
KTP Crystal | |
Transmissive Wavelength Range | 0.35 ~ 4.5 µm |
Electro-Optic Coefficient | r33=36 pm/V |
Dimension | 2 × 2 × 5 mm |
Output Mirror | |
Diameter | Φ 6 mm |
Radius yeCurvature | 50 mm |
He-Ne Alignment Laser | ≤ 1 mW @632.8 nm |
IR Kuona Kadhi | Spectral mhinduro renji: 0.7 ~ 1.6 µm |
Laser Safety Goggles | OD= 4+ ye808 nm uye 1064 nm |
Optical Power Meter | 2 μW ~ 200 mW, 6 zviyero |
ZVIKAMU RUNDA
Aihwa. | Tsanangudzo | Parameter | Qty |
1 | Optical Rail | ine chigadziko uye guruva chivharo, He-Ne laser magetsi anoiswa mukati mebhesi | 1 |
2 | He-Ne Laser Holder | nemutakuri | 1 |
3 | Alignment Aperture | f1 mm golewith mutakuri | 1 |
4 | Sefa | f10 mm aperture with carrier | 1 |
5 | Output Mirror | BK7, f6 mm R =50 mmine 4-axis inogadziriswa inobata uye mutakuri | 1 |
6 | KTP Crystal | 2 × 2 × 5 mm ine 2-axis inogadziriswa inobata uye mutakuri | 1 |
7 | Nd:YVO4 Crystal | 3 × 3 × 1 mm ine 2-axis inogadziriswa inobata uye mutakuri | 1 |
8 | 808nm LD (laser diode) | ≤ 500 mW ine 4-axis inogadziriswa inobata uye mutakuri | 1 |
9 | Detector Head Holder | nemutakuri | 1 |
10 | Infrared Viewing Card | 750 ~1600 nm | 1 |
11 | Iye-Ne Laser Tube | 1.5mW@632.8 nm | 1 |
12 | Optical Power Meter | 2 μW~200 mW (matanho matanhatu) | 1 |
13 | Detector Head | nebutiro uye posvo | 1 |
14 | LD Iyezvino Mutongi | 0 ~ 500 mA | 1 |
15 | Tambo yemagetsi | 3 | |
16 | Bhuku reMirayiridzo | V1.0 | 1 |
Nyora meseji yako pano ugotitumira