LPT-7 Diode-Pumped Solid-State Laser Demonstrator
Zvinotsanangurwa
| Semiconductor Laser | |
| CW Output Power | ≤ 500 mW |
| Polarization | TE |
| Center Wavelength | 808 ± 10 nm |
| Operation Temperature Range | 10 ~ 40 °C |
| Kutyaira Current | 0 ~ 500 mA |
| Nd: YVO4Crystal | |
| Nd Doping Concentration | 0.1 ~ 3 atm% |
| Dimension | 3 × 3 × 1 mm |
| Flatness | < λ/10 @632.8 nm |
| Coating | AR@1064 nm, R<0.1%; 808="" t="">90% |
| KTP Crystal | |
| Transmissive Wavelength Range | 0.35 ~ 4.5 µm |
| Electro-Optic Coefficient | r33=36 pm/V |
| Dimension | 2 × 2 × 5 mm |
| Output Mirror | |
| Diameter | Φ 6 mm |
| Radius yeCurvature | 50 mm |
| He-Ne Alignment Laser | ≤ 1 mW @632.8 nm |
| IR Kuona Kadhi | Spectral mhinduro renji: 0.7 ~ 1.6 µm |
| Laser Safety Goggles | OD= 4+ ye808 nm uye 1064 nm |
| Optical Power Meter | 2 μW ~ 200 mW, 6 zviyero |
ZVIKAMU RUNDA
| Aihwa. | Tsanangudzo | Parameter | Qty |
| 1 | Optical Rail | ine chigadziko uye guruva chivharo, He-Ne laser magetsi anoiswa mukati mebhesi | 1 |
| 2 | He-Ne Laser Holder | nemutakuri | 1 |
| 3 | Alignment Aperture | f1 mm golewith mutakuri | 1 |
| 4 | Sefa | f10 mm aperture with carrier | 1 |
| 5 | Output Mirror | BK7, f6 mm R =50 mmine 4-axis inogadziriswa inobata uye mutakuri | 1 |
| 6 | KTP Crystal | 2 × 2 × 5 mm ine 2-axis inogadziriswa inobata uye mutakuri | 1 |
| 7 | Nd:YVO4 Crystal | 3 × 3 × 1 mm ine 2-axis inogadziriswa inobata uye mutakuri | 1 |
| 8 | 808nm LD (laser diode) | ≤ 500 mW ine 4-axis inogadziriswa inobata uye mutakuri | 1 |
| 9 | Detector Head Holder | nemutakuri | 1 |
| 10 | Infrared Viewing Card | 750 ~1600 nm | 1 |
| 11 | Iye-Ne Laser Tube | 1.5mW@632.8 nm | 1 |
| 12 | Optical Power Meter | 2 μW~200 mW (matanho matanhatu) | 1 |
| 13 | Detector Head | nebutiro uye posvo | 1 |
| 14 | LD Iyezvino Mutongi | 0 ~ 500 mA | 1 |
| 15 | Power Cord | 3 | |
| 16 | Bhuku reMirayiridzo | V1.0 | 1 |
Nyora meseji yako pano ugotitumira









